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Analyzing silicon strain with Raman spectroscopy

Strain in semiconductor devices can be used to influence the electronic properties, and is used as so in strain engineering. Renata Lewandowska, product manager for spectral applications at Digital Surf, explains why Raman spectroscopy is an ideal technique for measuring strain, and give us an example.

AFM image analysis: determining surface quality of cap layers in superconductors

Researchers at the Institut de Ciència de Materials de Barcelona characterizied surface texture of superconductor materials with the aim of improving their performance.

Analyzing data from a large-scale multi-instrument project

The Institute of Electronics, Microelectronics and Nanotechnology (IEMN) in France recently completed the “Dirac III-V” project investigating ways of producing Dirac electrons (electrons without any mass). This project called for the use of many different fabrication methods as well as a software program capable of bringing together and processing the different kinds of datasets generated.

Analyzing photoelectron spectroscopic measurements

Scientists from the ISEN (Institut Supérieur de l’Électronique et du Numérique) in Lille, France, used photoelectron spectroscopy to investigate a new method for growing PbS nanoplatelets on InP surfaces.

Semiconductors: characterizing 3D structures at the nanoscale

Nanolithography is a precise patterning technology used to fabricate functional nanostructures for applications in biosensors, advanced materials and extensively in the semiconductor sector for solar cells, printed electronics, LED, MEMS, etc.

Failure analysis in optoelectronic devices

Quantitative cathodoluminescence technology coupled with the power of Mountains® software made it possible to localize and identify degraded layers in state-of-the-art green laser diodes.